Manufacture of semiconductor integrated circuit device

To provide an anti-corrosion technique in forming metal wires by chemical mechanical polishing (CMP), a method for making a semiconductor integrated circuit device according to the present invention comprises: forming a metal layer consisting of copper (Cu) (or copper alloy with copper as the main constituent, etc.) on the main surface of a wafer; planarizing the metal layer by CMP to form a metal wiring; applying an anti-corrosion treatment on the main surface of the wafer to form a hydrophobic protective film on the surface of the metal wiring; immersing the wafer in a liquid or keeping it in a wet state so as to prevent the main surface of the wafer from being dry; and cleaning by washing the main surface of the wafer which was kept in wet state.