Switched body SOI (silicon-on-insulator) circuits and fabrication method therefor

Switched body SOI (silicon-on-insulator) circuits and fabrication method therefor

Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch and the gate terminal of the SOI device is co...

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Bibliographische Detailangaben
Hauptverfasser: BERTIN, CLAUDE LOUIS, ELLIS-MONAGHAN, JOHN JOSEPH, HOOK, TERENCE BLACKWELL, HEDBERG, ERIK LEIGH, MANDELMAN, JACK ALLAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch and the gate terminal of the SOI device is connected to the FET device. The gate of the SOI device controls the FET switch connection of the body bias voltage signals to the SOI device to adjust the threshold value of the SOI device. Logic circuits incorporating the SOI devices are also disclosed, and the fabrication process for the SOI devices as well.