A method to form the third group nitride epitaxial layer on the single crystal substrate and its product and its equipment

The present invention relates to a method to form the third group nitride epitaxial layer on the single crystal substrate by the epitaxial growth by alternate supply of reactants (EGAS), mainly by alternately supplying the metal organic predecessor containing the third group of elements and the gas...

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Bibliographische Detailangaben

1. Verfasser:	GUNG, JR-RUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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