A method to form the third group nitride epitaxial layer on the single crystal substrate and its product and its equipment

The present invention relates to a method to form the third group nitride epitaxial layer on the single crystal substrate by the epitaxial growth by alternate supply of reactants (EGAS), mainly by alternately supplying the metal organic predecessor containing the third group of elements and the gas containing nitrogen to the surface of the single crystal substrate for thermal decomposition, so that the epitaxial thin film can be grown in cheap single crystal substrate to form a multilayer structure, thereby the production cost can be reduced. The present invention can be applied in fabricating optoelectronic devices such as LED, laser diode and high power high temperature type transistors, etc. The present invention also provides a multilayer structure fabricated by the method and the equipment for proceeding epitaxial growth on the single crystal substrate by using the method.