Method to produce a semiconductor-memory device

This invention relates to a method to produce a semiconductor-memory device with a matrix of semiconductor-memory elements (preferably MOSFETs) which are arranged in a substrate (10) with following steps: forming the semiconductor-memory elements including at least a part of the gate-structure (50),...

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Bibliographische Detailangaben
Hauptverfasser: OTANI, YOICHI, TRUEBY, ALEXANDER, ROTHENHAEUSER, STEFFEN, RUSCH, ANDREAS, ZIMMERMANN, ULRICH
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:This invention relates to a method to produce a semiconductor-memory device with a matrix of semiconductor-memory elements (preferably MOSFETs) which are arranged in a substrate (10) with following steps: forming the semiconductor-memory elements including at least a part of the gate-structure (50), so that the channel-region (40) has a fist doping-profile; forming a 1st mask (100) over said semiconductor-memory elements, said mask (100) is so structured that for a 1st group of said semiconductor-memory element a 1st doping material can be brought into the channel-region (40) from the side of the 1st doping-region (20) under a 1st pre-determined angle ( ) to the main-face normal (n) of said substrate (10); bring in (I1) the 1st doping material for said 1st group of semiconductor-memory elements, so that the corresponding channel-regions (40) have a 2nd doping-profile; forming a 2nd mask (100') over the semiconductor-memory elements, said 2nd mask (100') is so structured that for a 2nd group of said semiconductor-memory element a 2nd doping material can be brought into the channel-region(40) from the side of the 2nd doping-region (30) under a 2nd pre-determined angle ( ') to the main-face normal (n) of said substrate (10); bring in (I2) the 2nd doping material for the 2nd group of semiconductor-memory elements, so that the corresponding channel-regions (40) have a third of a 4th doping-profile depending on whether said 1st doping material has been brought into the channel-region (40) from the side of the 1st doping-region (20) or not.