Plasma processing apparatus

The present invention relates to a plasma processing apparatus. A bottom insulating member 13 is arranged around a sensor 6 of a bottom lower electrode, and an upper insulating member 31 is arranged around an upper electrode. An outer end portion 31a of the upper insulating member 31 is positioned o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HIROSE, KEIZO, NAGASEKI, KAZUYA, OGASAWARA, MASAHIRO, KOSHIISHI, AKIRA, TOMOYOSHI, RIKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a plasma processing apparatus. A bottom insulating member 13 is arranged around a sensor 6 of a bottom lower electrode, and an upper insulating member 31 is arranged around an upper electrode. An outer end portion 31a of the upper insulating member 31 is positioned outside the bottom lower insulating member 13, to be lower than the upper surface of a wafer W. The narrowest distance between the bottom lower insulating member 13 and the upper insulating member 31 is arranged to be smaller than the gap G between electrodes. Diffusion of plasma generated between electrodes is restricted and prevented from spreading to the sides, so that inner sidewall of a processing container 3 are not sputtered.