Method of removing slurry particles

Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the chemical mechanical polish (CMP) process to dis...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HUYNH, CUC K, MARMILLION, PATRICIA E, PALAGONIA, ANTHONY M, PIERSON, BERNADETTE A., LINDE, HAROLD G
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed is a method and apparatus for polishing a semiconductor wafer. This invention describes a novel in situ method for eliminating residual slurry and slurry abrasive particles on the wafer. A reactant is added to the slurry during the end of the chemical mechanical polish (CMP) process to dissolve the slurry and etch the abrasive particles.