Process for deposition of silicon oxide film

To change a process for deposition of silicon oxide film by ozone activated vapor phase deposition of tetraethylorthosiliate (TEOS), suggest by changing the proportion of TEOS to ozone gas flux with increasing ozone composition for reducing the original high proportion to achieve the stable state. A...

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Bibliographische Detailangaben
Hauptverfasser:	GABRIC, ZVONIMIR, SPINDLER, OSWALD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To change a process for deposition of silicon oxide film by ozone activated vapor phase deposition of tetraethylorthosiliate (TEOS), suggest by changing the proportion of TEOS to ozone gas flux with increasing ozone composition for reducing the original high proportion to achieve the stable state. A homogenous silicon oxide film will be formed.