Magnetic-field applied Czochralski crystal growth apparatus

A magnetic-field applied Czochralski crystal growth apparatus having at least one growing furnace for containing molten semicondutor material, a pulling device for pulling a crystal from the molten semiconductor material in a perdetermined direction, and a magnetic field generator for generating a m...

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Bibliographische Detailangaben
Hauptverfasser:	SASAKI, TAKASHI, KOGUCHI, YOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRICITY INDUCTANCES MAGNETS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSFORMERS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A magnetic-field applied Czochralski crystal growth apparatus having at least one growing furnace for containing molten semicondutor material, a pulling device for pulling a crystal from the molten semiconductor material in a perdetermined direction, and a magnetic field generator for generating a magnetic field to be applied to the molten semiconductor material. The magnetic field generator has a plurality of magnet units and a coupling mechanism coupling the magnet units together such that the growing furnace is located between said magnet units.