Method of and apparatus for measuring lifetime of carriers in semiconductor sample

In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample which is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substance which exist in the solution, largely ch...

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Bibliographische Detailangaben
Hauptverfasser:	YOSHIDA, NAOYUKI, HASHIZUME, HIDEHISA+, TAKAMATSU, HIROYUKI, SUMIE, SHINGO, KAWADA, YUTATA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample which is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substance which exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.