Semiconductor laser structure
A semiconductor laser structure comprises a current isolation layer formed near a block of a laser facet in the region where a current is injected so as to isolate the injection of the current in order to reduce the current density and increase the COD level of the output power that can be withstood...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor laser structure comprises a current isolation layer formed near a block of a laser facet in the region where a current is injected so as to isolate the injection of the current in order to reduce the current density and increase the COD level of the output power that can be withstood by a laser diode, thereby avoiding the situation where a diode can not operate normally due to the emission facet of a laser diode has been in use for a long time. Furthermore, the production process is simple, and the structure is suitable in high energy output, and can increase the operation life. |
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