Method for rapid thermal processing (RTP) of a silicon substrate

A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching growth of oxides on the silicon surface.

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Bibliographische Detailangaben
Hauptverfasser:	LERCH, WILFRIED, SOMMER, HELMUT, NENYEI, ZSOLT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching growth of oxides on the silicon surface.