Method capable of preventing the metal layer of a semiconductor chip from being corroded

The present invention provides a method capable of preventing the metal layer of a semiconductor chip from being corroded. The method is used to prevent the aluminum metal layer on a semiconductor chip from being corroded by residual chlorine after completing an etching process. The method comprises the steps of: (1) using an ashing process with a temperature of 178 to 200 DEG C to clean the photoresist layer on the surface of the semiconductor chip immediately after etching the aluminum metal layer on the surface of the semiconductor chip; (2) utilizing an acid organic solution, formed by mixing hydroxylamine, hydroquinone, monoethanolanine and water, to clean the surface of the semiconductor chip; and (3) placing the semiconductor chip in an environment with a temperature of 200 to 250 DEG C for hot baking, such that all chlorine-containing impurities remained on the surface of the metal layer are heated to evaporate by heating and thus escape out of the surface of the metal layer, thereby preventing the aluminum metal layer of the semiconductor chip from being corroded.