Method for improving step coverage of trench film deposition and its applications
A method for improving a step coverage of depositing film in a trench is provided. The method includes regressing silicon nitride and silicon dioxide on the trench opening by HF vapor etching process. The regressing amount of silicon nitride is larger than that of silicon dioxide, so that a step str...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for improving a step coverage of depositing film in a trench is provided. The method includes regressing silicon nitride and silicon dioxide on the trench opening by HF vapor etching process. The regressing amount of silicon nitride is larger than that of silicon dioxide, so that a step structure is formed. Thus, the step coverage ability is improved and the yield of semiconductor devices increases. The method can be applied to manufacture a trench capacitor of dynamic random access memory (DRAM). |
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