The semiconductor device and its manufacturing method

If poly-crystal silicon is used as the electrode material, it will produce silicon oxide, which limits the amplifying capacity of the capacitor, even when tantalum oxide is the dielectrics material of the DRAM capacitor. This is a semiconductor device with solid cylindrical capacitor structure. Capa...

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Bibliographische Detailangaben
Hauptverfasser:	SUGAWARA, YASUHIRO, IIJIMA, SINPEI, KUNITOMO, MASATO, KANAI, MISUZU, ASANO, ISAMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	If poly-crystal silicon is used as the electrode material, it will produce silicon oxide, which limits the amplifying capacity of the capacitor, even when tantalum oxide is the dielectrics material of the DRAM capacitor. This is a semiconductor device with solid cylindrical capacitor structure. Capacitor structure includes cylindrical shaped bottom electrode, dielectrics, and the top electrode. Cylindrical shaped bottom electrode is composed of tantalum nitride. Dielectrics is composed of poly-crystal tantalum oxide formed on the cylindrical shaped bottom electrode. The top electrodeis composed of titanium nitride on the dielectrics.