Reduction of black silicon in semiconductor fabrication

Reduction of black silicon in semiconductor fabrication

A method for reducing black silicon formed in semiconductor fabrication, comprising: providing a wafer, forming pads above the main surface of said wafer at least,said pads protecting the die region at the main surface of said wafer, and leaving the unprotected bead region; andforming a dielectric l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: PERNG, DUNGING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for reducing black silicon formed in semiconductor fabrication, comprising: providing a wafer, forming pads above the main surface of said wafer at least,said pads protecting the die region at the main surface of said wafer, and leaving the unprotected bead region; andforming a dielectric layer on the region without the protection of said pads, said dielectric layer providing an extra protection during the following etching process to reduce black silicon formed.