Thin film transistor

A thin film transistor used in an active matrix type liquid crystal display device, is disclosed. A thin film transistor according to the present invention includes a transparent insulating substrate on which a gate electrode is formed. A first gate insulating layer is formed on the substrate and a second gate insulating layer is formed on the first gate insulating layer exisitng over the gate electrode. An active layer is formed on the second gate insulating layer so that it is spaced from the edges of the gate electrode with a selected distance. First and second ohmic layers are formed on the first gate insulating layer. The upper surface of the active is exposed by the first and second ohmic layers and the first and second ohmic layers are overlapped with both sides of the active layer. Source and drain electrodes are formed on the first and second ohmic layers. An etch stopper is formed on the active layer so that it is spaced from the edges of the gate electrode with a selected distance. Preferably, the active layer is spaced from the edges of the gate electrode with the distance of 0.5 to 1.5 mu m.