Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide

Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide

Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.

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Bibliographische Detailangaben
Hauptverfasser: MCCULLOUGH, KENNETH J, MADDEN, KAREN P., JAGANNATHAN, RANGARAJAN, RATH, DAVID L, OKORN-SCHMIDT, HARALD F
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Etching residue, etching mask and silicon nitride and/or silicon dioxide are etched or removed employing a composition containing a fluoride containing compound, water and certain organic solvents.