Plasma processing method in semiconductor processing system

A susceptor on which a wafer is placed, and an upper electrode are arranged in the processing chamber of an etching apparatus to oppose each other. An optical transmission window is disposed in the side wall of the processing chamber. The upper electrode and the susceptor are supplied with RF powers...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ISHIHARA, HIROYUKI, KAWAMURA, GOHEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MEASURING PERFORMING OPERATIONS PHYSICS POLISHING SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	A susceptor on which a wafer is placed, and an upper electrode are arranged in the processing chamber of an etching apparatus to oppose each other. An optical transmission window is disposed in the side wall of the processing chamber. The upper electrode and the susceptor are supplied with RF powers from a second RF power supply and a first RF power supply, respectively, to excite a plasma in the processing chamber. Emission of the plasma is detected by an optical detector through the optical transmission window, and data is sampled. In a CPU, the sampling data is subjected to fitting based on the Weibull distribution function, thus obtaining an approximate equation, and furthermore the differential equation of the approximate equation is obtained. The virtual end point of etching is expected from the approximate equation and differential equation.