I/O circuit allowing wider voltage ranges

A kind of I/O circuit allowing wider voltage ranges which employs feedback circuit technique to solve the problem of I/O circuit voltage tolerance. The present invention employs single-gate oxide layer process but not the double-gate oxide layer process for solving problems of gate oxide reliability...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SHR, JIAN-GAU, MO, YA-NAN, LIOU, JIUN-FU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A kind of I/O circuit allowing wider voltage ranges which employs feedback circuit technique to solve the problem of I/O circuit voltage tolerance. The present invention employs single-gate oxide layer process but not the double-gate oxide layer process for solving problems of gate oxide reliability and leakage current of PN junction and PMOS transistor such that it can effectively reduce the manufacturing cost of chips, lower the output resistance and increase the transmission speed.