A method of manufacturing an insulated gate field effect transistor

A method of forming Field Effect Transistors (FETS) on a semiconductor layer of a wafer comprising the steps of: (a) forming trenches in a surface of said semiconductor layer; (b) forming a dielectric layer on the surface, lining the trenches; (c) diffusing an oxidation catalyst along the dielectric layer; (d) exposing the surface of the semiconductor material, with the dielectric layer remaining in the trenches; (e) forming a gate oxide layer on the exposed semiconductor surface; and (f) forming some FET gates on the gate oxide layer.