Low pressure and low power Cl2/HCl process for sub-micron metal etching

A process for forming a pattern on an aluminum metal coating layer, which comprises the following steps: mounting an aluminum metal coating layer in an etching chamber; generating a plasma from Cl2, HCl and inert gas by using electrodes located above and below the aluminum metal coating layer and se...

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Bibliographische Detailangaben
Hauptverfasser:	ROSEMARY CHRISTIE, STUART M. BURNS, MUNIR D. NAEEM, WALTER W. KOCON, CHI-HUA YANG, BRUNO SPULER, NARITA MASAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A process for forming a pattern on an aluminum metal coating layer, which comprises the following steps: mounting an aluminum metal coating layer in an etching chamber; generating a plasma from Cl2, HCl and inert gas by using electrodes located above and below the aluminum metal coating layer and separately applied with power, in which each of the electrodes is applied with a power lower than 350 watts, and the pressure in the etching chamber is less than 15 mTorr; and etching the aluminum metal coating layer with the ions and radicals formed in the plasma.