Pulsed plate plasma implantation system

A method of processing one or more workpieces includes a. one or more workpieces are inserted into the chamber and located on the conductive support so that implanting surfaces are facing the interior region. A conductive wall in the processing chamber is used to define the interior region of the processing chamber. B. a dopant material in the form of gas is injected into the implanting chamber to cause the gas to occupy a region of the implantation chamber in close proximity to the one or more workpieces c. voltage pulses are provided between the conductive support and the potion of the conductive wall to generate the continuous relative bias to both ionize the gas molecules injected into the chamber and accelerate the ionized gas molecules toward the implantation surfaces of the one or more workpieces.