Semiconductor apparatus and manufacturing method thereof

A semiconductor apparatus has the features of: (1) Si substrate; (2) forming strain absorbing layer constituted by GaAs on the Si substrate;(3) forming buffer layer constituted by compound consisting of AlxGa1-x- yInyN(0

Bibliographische Detailangaben

Hauptverfasser:	DIETHARD MARX, HAYAFUJI NORIO, KAWAZU ZENPEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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