Semiconductor apparatus and manufacturing method thereof
A semiconductor apparatus has the features of: (1) Si substrate; (2) forming strain absorbing layer constituted by GaAs on the Si substrate;(3) forming buffer layer constituted by compound consisting of AlxGa1-x- yInyN(0
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor apparatus has the features of: (1) Si substrate; (2) forming strain absorbing layer constituted by GaAs on the Si substrate;(3) forming buffer layer constituted by compound consisting of AlxGa1-x- yInyN(0 |
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