Semiconductor device and semiconductor storage device

A semiconductor device includes a first insulating layer; an oxide semiconductor formed in the first insulating layer, extending in a first direction, and having a first end and a second end; a first electrode including a first metal film that includes a first metal atom, and a first conductive film...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: OKABE, KASUMI, NODA, KOTARO, FUJII, TAKAHIRO, AKITA, TAKANORI
Format: Patent
Sprache:chi ; eng
Schlagworte:
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