Semiconductor device and semiconductor storage device

A semiconductor device includes a first insulating layer; an oxide semiconductor formed in the first insulating layer, extending in a first direction, and having a first end and a second end; a first electrode including a first metal film that includes a first metal atom, and a first conductive film that is formed between the first metal film and the first end of the oxide semiconductor and includes metal oxide; a second electrode in contact with the second end of the oxide semiconductor; at least a pair of gate electrodes that face each other via an insulating film, and are interposed between the first end and the second end of the oxide semiconductor; and a first structure that is separated from the first electrode in a second direction intersecting the first direction, includes at least the first metal atom, and does not include the metal oxide.