Semiconductor structure and fabricating method thereof
A method comprises bonding a first wafer with a second wafer through wafer-on-wafer bonding, wherein the second wafer includes a first plurality of device dies therein. A second plurality of device dies are bonded on the second wafer through chip-on-wafer bonding. A gap-filling process is performed...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A method comprises bonding a first wafer with a second wafer through wafer-on-wafer bonding, wherein the second wafer includes a first plurality of device dies therein. A second plurality of device dies are bonded on the second wafer through chip-on-wafer bonding. A gap-filling process is performed to fill the gaps between the second plurality of device dies with gap-filling regions. The gap-filling regions and the second plurality of device dies collectively form a reconstructed wafer. |
|---|