Photoresist solution, method of using the same and method of improving photoresist performance

Methods and materials for reducing the radiation dosage needed for development of a metallic photoresist are disclosed. During development, the metallic photoresist is exposed to an additive that comprises (i) one aromatic group with one or more substituents having at least one saturated endgroup; o...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, CHING-YU, LEE, PENG-TING, LEE, HUIUN, ZI, AN-REN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Methods and materials for reducing the radiation dosage needed for development of a metallic photoresist are disclosed. During development, the metallic photoresist is exposed to an additive that comprises (i) one aromatic group with one or more substituents having at least one saturated endgroup; or (ii) a plurality of aromatic groups linked together through a linking moiety. Improved line resolution is also obtained.