Semiconductor device

A memory device includes a first chip including a first electrode and a second chip including a second electrode. The first electrode includes a first conductive film having a first surface in contact with the second electrode at a boundary region of the first and second electrodes, a second surface...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KUME, IPPEI, WATARAI, AYUMI, TAGUCHI, YUTA, KAWANISHI, AYAKO, KIYOMURA, YUYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A memory device includes a first chip including a first electrode and a second chip including a second electrode. The first electrode includes a first conductive film having a first surface in contact with the second electrode at a boundary region of the first and second electrodes, a second surface spaced apart from the boundary region, and a third surface between the first surface and the second surface, and having a first portion on the first surface side and a second portion on the second surface side, and includes a second conductive film covering the second surface and the third surface of the first conductive film. A (111) orientation ratio of copper contained in the first portion is higher than a (111) orientation ratio of copper contained in the second portion.