Dry developing method and dry developing device

The method of the present invention includes: (a) a step for providing a substrate on a substrate support part in a chamber, the substrate comprising a base film and a metal-containing resist on the base film, and the metal-containing resist having an exposed first region and an unexposed second reg...

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Bibliographische Detailangaben
Hauptverfasser:	KUMAKURA, SHO, NAKANE, YUTA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The method of the present invention includes: (a) a step for providing a substrate on a substrate support part in a chamber, the substrate comprising a base film and a metal-containing resist on the base film, and the metal-containing resist having an exposed first region and an unexposed second region; (b) a step for forming a metal fluoride layer on the surface of the second region by supplying a first treatment gas containing a fluorine-containing gas into the chamber; and (c) a step for removing the metal fluoride layer by supplying a second treatment gas containing a chlorine-containing gas into the chamber.