Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a1) supplying a first modifying gas to a substrate; (a2) supplying a first process gas containing a first element to the substrate; (b1) supplying a second modifying gas to the substrate; and (b2) supplying a second process gas, which contains a second e...

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Bibliographische Detailangaben
Hauptverfasser: NAGATOMI, YOSHIMASA, ISOBE, NORIYUKI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:There is provided a technique that includes: (a1) supplying a first modifying gas to a substrate; (a2) supplying a first process gas containing a first element to the substrate; (b1) supplying a second modifying gas to the substrate; and (b2) supplying a second process gas, which contains a second element and is more readily adsorbed on a surface of the substrate than the first process gas under a same condition, to the substrate, wherein (a1) and (a2) are performed a first number of times and (b1) and (b2) are performed a second number of times to form a film containing the first element and the second element, and wherein (b1) is performed under a condition in which the second modifying gas is more readily adsorbed on the surface of the substrate than the first modifying gas under a same condition.