Method for forming an patterned insulating layer and semiconductor device

The present invention provides a method for forming an insulating film pattern, comprising the steps of: providing a substrate including two or more different types dielectric film areas; selectively forming a barrier film on the substrate so as to include an a first area in which a barrier film is...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, JUN-YOUNG, KIM, HWAN-SOO, BOK, CHEOL-KYU, LEE, JAE-WOO, KIM, PIL-SOO, SIM, JANG-KEUN, LEE, HAN-JIN, YEO, SO-JEONG, LEE, GYEONG-A
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides a method for forming an insulating film pattern, comprising the steps of: providing a substrate including two or more different types dielectric film areas; selectively forming a barrier film on the substrate so as to include an a first area in which a barrier film is formed and a second area in which a barrier film is not formed or a barrier film is relatively less formed; selectively forming an insulating film on the second area; and etching a portion of the upper part of the insulating film.