Light-touch polishing composition

The present invention provides a light-touch polishing composition comprising cerium oxide abrasive particles, anionic polymer, cationic polymer, nitrogen-containing heterocarboxylic acid, and nonionic surfactant. The polishing composition provided by the present invention utilizes a polishing liqui...

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Bibliographische Detailangaben
Hauptverfasser:	JIA, CHANG-ZHENG, WANG, ERIC XING-PING, XU, PENG-YU, JIANG, NAN, CHEN, YIN-BIN, LI, SHOUTIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a light-touch polishing composition comprising cerium oxide abrasive particles, anionic polymer, cationic polymer, nitrogen-containing heterocarboxylic acid, and nonionic surfactant. The polishing composition provided by the present invention utilizes a polishing liquid component for light-touch polishing of silicon oxide with minimal abrasive particles. The light-touch polishing composition is capable of removing silicon oxide dielectric layer (e.g., polishing rate greater than 300Å/min with solid content below 50 ppm), while stopping on tungsten, silicon nitride, or polycrystalline silicon (polishing rate less than 50 Å/min, or less than 20 Å/min, or less than 10Å/min).