3D dynamic random access memory (DRAM) and methods for fabricating 3D-DRAM

A three-dimensional (3D) dynamic random-access memory (DRAM) includes a substrate and a plurality of nanosheet transistors stacked vertically on a surface of the substrate. Each of the nanosheet transistors comprises a gate, a source, and a drain. A plurality of bitlines is connected to correspondin...

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Bibliographische Detailangaben

Hauptverfasser:	ERVIN, JOSEPH, VINCENT, BENJAMIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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