Source gas nozzle and semiconductor wafer processing apparatus including the same

A source gas nozzle and a semiconductor wafer processing apparatus are provided. The source gas nozzle includes: an upstream pipe; a downstream pipe; and a U-turn pipe connecting the upstream pipe and the downstream pipe, wherein a plurality of first gas discharge holes are disposed in a longitudina...

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Bibliographische Detailangaben
Hauptverfasser:	PARK, JI-YE, KIM, SUNG-HYUP, AHN, TAE-HEUNG, CHOI, SE-BIN, HWANG, BYEONG-HO, LEE, SANG-YUP
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A source gas nozzle and a semiconductor wafer processing apparatus are provided. The source gas nozzle includes: an upstream pipe; a downstream pipe; and a U-turn pipe connecting the upstream pipe and the downstream pipe, wherein a plurality of first gas discharge holes are disposed in a longitudinal direction along at least one of the upstream pipe or the downstream pipe, and a gas non-discharge hole region and an asymmetric gas discharge hole region comprising a plurality of second gas discharge holes are disposed in opposite ones of the upstream pipe and the downstream pipe, and wherein the gas non-discharge hole region and the asymmetric gas discharge hole region are adjacent.