Plasma-exposed parts comprising an etch-resistant material
One example provides a plasma-exposed part for a plasma processing tool. The plasma-exposed part comprises an etch-resistant material that has a lower etch rate than silicon or silicon carbide when exposed to plasma process gas chemistries comprising fluorine and/or oxygen. The etch-resistant materi...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | One example provides a plasma-exposed part for a plasma processing tool. The plasma-exposed part comprises an etch-resistant material that has a lower etch rate than silicon or silicon carbide when exposed to plasma process gas chemistries comprising fluorine and/or oxygen. The etch-resistant material comprising one or more of (a) an oxide, a nitride, or an oxynitride of one or more of titanium, hafnium, zirconium, or tin, or (b) one or more of silicon or silicon carbide doped with one or more of titanium, hafnium, zirconium, or tin. |
|---|