Improving chemistry utilization by increasing pressure during substrate processing

A substrate processing system comprises a processing chamber comprising a pedestal configured to support a substrate. The processing chamber comprises a showerhead configured to supply precursors during dose steps and a purge gas during purge steps of an atomic layer deposition (ALD) process to proc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	RICHEY, NATHANIEL ELBA, BHIMARASETTI, GOPINATH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A substrate processing system comprises a processing chamber comprising a pedestal configured to support a substrate. The processing chamber comprises a showerhead configured to supply precursors during dose steps and a purge gas during purge steps of an atomic layer deposition (ALD) process to process the substrate. The dose steps and the purge steps comprise a sequence of a dose step followed by a subsequent purge step. The substrate processing system comprises a throttle valve connected to the processing chamber and a vacuum pump connected to the throttle valve. The substrate processing system comprises a controller configured to control the vacuum pump, open the throttle valve during the purge steps, and close the throttle valve during at least a portion of the dose steps to increase pressure in the processing chamber during at least the portion of the dose steps of the ALD process.