Depth-profiling of samples based on X-ray measurements

Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured to measure the emitted X-ray light to obtain optical emission data sets pertaining to each of the probed regions, respectively. The processing circuitry is configured to determine a set of structural parameters, characterizing an internal geometry and/or a composition of the inspected sample, based on the measured optical emission data sets and taking into account reference data indicative of an intended design of the inspected sample.