Chemical vapor deposition of silicon nitride using a remote plasma

Examples are disclosed that relate to low-damaging deposition of silicon nitride films using chemical layer deposition (CVD). One example provides a method (300) for forming a silicon nitride film on a substrate in a processing chamber by chemical vapor deposition. The method comprises introducing (302) a nitrogen-containing precursor into a remote plasma formed in a remote plasma chamber of a processing tool. The method further comprises forming (308) radical nitrogen species in the remote plasma. The method further comprises flowing (312) an oxygen-free silicon-containing precursor into a processing chamber of the processing tool. The method further comprises, while flowing the oxygen-free silicon-containing precursor, introducing (316) the radical nitrogen species from the remote plasma chamber into the processing chamber. The method further comprises reacting the oxygen-free silicon-containing precursor with the radical nitrogen species to form the silicon nitride film on the substrate.