Copper alloy sputtering film, copper alloy sputtering target, manufacturing method of copper alloy sputtering film, and manufacturing method of copper alloy sputtering target to provide a copper alloy sputtering film having a high film hardness above 10.0 HTL

The present invention provides a copper alloy sputtering film having a high film hardness and its manufacturing method. Furthermore, the present invention provides a copper alloy sputtering target suitable for forming the above-mentioned sputtering film and its manufacturing method. The copper alloy...

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Bibliographische Detailangaben
Hauptverfasser:	WATANABE, HIROYUKI, YAMAGISHI, KOICHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ALLOYS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	The present invention provides a copper alloy sputtering film having a high film hardness and its manufacturing method. Furthermore, the present invention provides a copper alloy sputtering target suitable for forming the above-mentioned sputtering film and its manufacturing method. The copper alloy sputtering film of the present invention contains silver (Ag) in a proportion of 5.0 mass % to 30.0 mass %, the remainder composed of copper (Cu) and inevitable impurities, and a microcrystalline size of 30 nm or less. The film hardness of the copper alloy sputtering film is above 10.0 HTL. The copper alloy sputtering target contains silver (Ag) in a proportion of 5.0 mass % to 30.0 mass %, the remainder composed of copper (Cu) and inevitable impurities, and an average grain size of 10 [mu]m or less.