Photodiode structure
The present invention provides a photodiode structure, which includes a first electrode, a semiconductor structure, a first anti-reflection layer, a second anti-reflection layer, a second electrode and a blocking structure. The semiconductor structure is located on the first electrode. The first ant...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention provides a photodiode structure, which includes a first electrode, a semiconductor structure, a first anti-reflection layer, a second anti-reflection layer, a second electrode and a blocking structure. The semiconductor structure is located on the first electrode. The first anti-reflection layer is located on the semiconductor structure layer. The second anti-reflection layer is located on the first anti-reflection layer. The second electrode is located on the second anti-reflection layer and penetrates the first anti-reflection layer and the second anti-reflection layer to electrically connect the semiconductor structure. The blocking structure is arranged between the first anti-reflection layer and the second electrode to prevent the first anti-reflection layer from directly contacting the second electrode. |
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