Chemical mechanical polishing slurry

The present invention provides a chemical mechanical polishing (CMP) slurry comprising abrasive particles, five-membered N-heterocyclic compounds, six-membered N heterocyclic compounds, organic acids, and oxidizers. The CMP slurry in the present invention has high Cu removal rate. By using two types...

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Bibliographische Detailangaben
Hauptverfasser:	SONG, KAI, ZHOU, JAIME JING-YU, LIU, TIAN-QI, ZHOU, WEN-TING, LI, JIN-LIN, WANG, GUO-HAO, MA, JEREMY JIAN, JING, JIAN-FEN, YANG, VIOLA JUN-YA, YAO, YING, LI, RYAN YUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	The present invention provides a chemical mechanical polishing (CMP) slurry comprising abrasive particles, five-membered N-heterocyclic compounds, six-membered N heterocyclic compounds, organic acids, and oxidizers. The CMP slurry in the present invention has high Cu removal rate. By using two types of nitrogen-containing heterocyclic compounds as corrosion inhibitors, it reduces the dishing and erosion, and defect count on the copper surface after polishing.