Ion implantation system

An ion implantation system, an apparatus and method for treating an ion beam are provided. The apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second groun...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SINCLAIR, FRANK
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:An ion implantation system, an apparatus and method for treating an ion beam are provided. The apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to the at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of the at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.