Overlay measurement for a semiconductor specimen

Overlay measurement for a semiconductor specimen

There is provided a system and method of determining an overlay measurement between a first layer and a second layer of a specimen. The method includes acquiring a first image of a first structure on the first layer and a second image of a second structure on the second layer, obtaining one or more...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ADEL, MICHAEL ELLIOT, BEN-SHLOMO, TAL, ALUMOTOR, KAPLAN, VLADISLAV, FUCHS, DAN TUVIA, ABRAMOVITZ, YANIV
Format: Patent
Sprache:chi ; eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:There is provided a system and method of determining an overlay measurement between a first layer and a second layer of a specimen. The method includes acquiring a first image of a first structure on the first layer and a second image of a second structure on the second layer, obtaining one or more first regions of interest (ROIs) enclosing part of the first structure and one or more second ROIs enclosing part of the second structure, determining one or more first sets of symmetric sub-structures based on the first ROIs and one or more second sets of symmetric sub-structures based on the second ROIs, localizing a first center of symmetry (COS) based on a COS identified for each first set, and localizing a second COS based on a COS identified for each second set, and determining the overlay measurement based on the first COS and the second COS.