Semiconductor device

The present invention provides a semiconductor device which is capable of suppressing destruction of elements that is caused by the concentration of carriers in the boundary part between a diode region and an IGBT region due to the inflow of carriers into the IGBT region from the diode region during diode recovery. Provided is a semiconductor device 1 having an IGBT region 21 and a diode region 22 in the same chip, wherein: each IGBT in the IGBT region 21 comprises a drift layer 2 that has a first conductivity type, a body layer 3 that has a second conductivity type, and a first contact layer 5 that has the second conductivity type and has a higher impurity concentration than the body layer 3; each diode in the diode region 22 comprises a first semiconductor layer 11 that has the second conductivity type, and a second contact layer 12 that has the second conductivity type and has a higher impurity concentration than the first semiconductor layer 11; and the area of the second contact layer 12 of the diodes in