P-type GaN high electron mobility transistor

A p-type GaN high electron mobility transistor is provided to solve the problem of hydrogen dispersion in the process of the conventional p-type GaN high electron mobility transistor that affects the operating characteristics of the transistor device. The transistor includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer. A gate electrode is located on the doped layer. The hydrogen barrier layer is doped with fluorine.