Semiconductor device and method for forming same

A method of forming a semiconductor device according to the present disclosure includes forming a metal-insulator-metal (MIM) structure in a substrate and forming an interconnect structure over the substrate. The MIM structure includes first electrodes of a first polarity and second electrodes of a second polarity. The interconnect structure includes conductive paths electrically connecting to the first and second electrodes. The conductive paths are isolated from each other inside the interconnect structure. The method also includes forming first and second contact pads over the interconnect structure. The first contact pad electrically connects a first portion of the conductive paths corresponding to the first electrodes. The second contact pad electrically connects a second portion of the conductive paths corresponding to the second electrodes.