Semiconductor device

A semiconductor device includes a gate structure, a first spacer, a second spacer, an epitaxial layer and a capping layer. The gate structure is disposed on a substrate. The first spacer and the second spacer are around the gate structure, wherein the substrate includes an inclined surface directly...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, CHUNG-TING, HUANG, JHONG-YI, LIU, CHIA-JONG, TANG, CHI-HSUAN, JIANG, BING-YANG, CHEN, KUANG-HSIU, WANG, KAI-HSIANG, CHEN, CHAO-NAN, CHEN, CHUN-JEN, WU, GUAN-YING, CHUANG, WEIIH, CHENG, YU-LIN, LIN, YU-SHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device includes a gate structure, a first spacer, a second spacer, an epitaxial layer and a capping layer. The gate structure is disposed on a substrate. The first spacer and the second spacer are around the gate structure, wherein the substrate includes an inclined surface directly connected with the second spacer. The epitaxial layer is disposed at two sides of the gate structure and covers the inclined surface. The capping layer is disposed on the epitaxial layer, wherein the capping layer includes a flat upper surface and an inclined sidewall connected with the flat upper surface.