Semiconductor laser element
Provided is a semiconductor laser element in which carrier loss can be reduced. A semiconductor laser element according to the present invention has, in the following order in the upward direction, an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, each of the layers b...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | Provided is a semiconductor laser element in which carrier loss can be reduced. A semiconductor laser element according to the present invention has, in the following order in the upward direction, an n-side semiconductor layer, an active layer, and a p-side semiconductor layer, each of the layers being composed of a nitride semiconductor, wherein the p-side semiconductor layer has a first portion that is undoped, an electron barrier layer containing p-type impurities, and a second portion that has one or more p-type semiconductor layers containing p-type impurities, the first portion having: a first p-side composition-graded layer that is composed of InxGa1-xN, the In composition ratio x decreasing within the range of 0 to less than 1 with progression in the upward direction; a second p-side composition-graded layer that is disposed between the first p-side composition-graded layer and the electron barrier layer and composed of AlyGa1-yN, the Al composition ratio y increasing within the range of greater than |
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